BAND-GAP VARIATION AND LATTICE, SURFACE, AND INTERFACE INSTABILITIES IN HG1-XCDXTE AND RELATED-COMPOUNDS

被引：93

作者：

SPICER, WE

SILBERMAN, JA

LINDAU, I

CHEN, AB

SHER, A

WILSON, JA

机构：

[1] AUBURN UNIV,DEPT PHYS,AUBURN,AL 36830

[2] SRI INT,MENLO PK,CA 94025

[3] SANTA BARBARA RES CTR,GOLETA,CA 93017

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.572206

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1735 / 1743

页数：9

共 34 条

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[28] UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES [J].

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[29] SURFACE AND INTERFACES OF HGCDTE - WHAT CAN WE LEARN FROM 3-5S - WHAT IS UNIQUE WITH HGCDTE [J].

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