CORRECTION FACTOR IN THE SPLIT C-V METHOD FOR MOBILITY MEASUREMENTS

被引：16

作者：

HUANG, CL ^{[1
]}

GILDENBLAT, GS ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,UNIV PK,PA 16802

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 04期

关键词：

D O I：

10.1016/0038-1101(93)90273-S

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present experimental and theoretical results concerning the accuracy of the split C-V method. The correction factor is introduced and computed as a function of terminal voltages, temperature, doping concentration and oxide thickness. Theoretical computations are compared with experimental data for two groups of n-channel and p-channel MOS transistors fabricated using dual-type poly-gate CMOS process.

引用

页码：611 / 615

页数：5

共 12 条

[1]

AHN JG, 1991, 1991 P INT SEM DEV R, P123

[2] A NEW AC TECHNIQUE FOR ACCURATE DETERMINATION OF CHANNEL CHARGE AND MOBILITY IN VERY THIN GATE MOSFETS [J].