MN-3D DERIVED PARTIAL DENSITY-OF-STATES AT THE INTERFACE OF EPITAXIALLY GROWN ZINCBLENDE MNTE ON CDTE(100)

Zinc-blende MnTe films (0 to 10 monolayers (ML)) were grown by molecular beam epitaxy (MBE) on CdTe(100). Angle-resolved photoelectron spectroscopy (ARPES) and resonantly enhanced photoelectron spectroscopy (RPES) were performed. The Mn-3d derived partial density of states (Mn-3d PDOS) was determined for the first time. By analysis of the Fano-like Mn 3p-3d resonance near hnu = 50 eV, three contributions to the Mn-3d PDOS were derived (denoted M, at 3.6 eV binding energy (BE), V, at 1.9 eV BE and S, near 7.5 eV BE). The Fano q-parameters obtained agree with the prediction that V relates basically to charge transferred states of Mn-3d5 L character and S represents predominantly Mn-3d4 satellite emission. The relative branching ratios for the latter two features to the first (V/M and S/M) grow monotonically as a function of thin MnTe coverage exceeding bulk Cd1-xMnxTe values for thicker films. This behavior is possibly due to strain and distortion of the tetrahedral symmetry at the interface and due to the phase transition to NiAs structure.