IN-DEPTH AUGER ANALYSIS OF ALUMINIUM-SILICON INTERFACIAL REACTIONS

被引：14

作者：

CARD, HC ^{[1
]}

SINGER, KE ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,SACKVILLE ST,MANCHESTER M60 1QD,ENGLAND

来源：

THIN SOLID FILMS | 1975年 / 28卷 / 02期

关键词：

D O I：

10.1016/0040-6090(75)90116-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：265 / 268

页数：4

共 9 条

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[2]

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[3] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

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[4]

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[5]

CARD HC, TO BE PUBLISHED

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[7] USE OF AUGER-ELECTRON SPECTROSCOPY AND INERT-GAS SPUTTERING FOR OBTAINING CHEMICAL PROFILES [J].

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[8] SOLID-PHASE EPITAXIAL-GROWTH OF SI MESAS FROM AL METALLIZATION [J].

SANKUR, H ;

MCCALDIN, JO ;

DEVANEY, J .

APPLIED PHYSICS LETTERS, 1973, 22 (02) :64-66

[9] SCHOTTKY BARRIERS ON P-TYPE SILICON [J].

SMITH, BL ;

RHODERICK, EH .

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