P-N JUNCTIONS IN LEAD TELLURIDE

被引：12

作者：

DAY, HM

MACPHERSON, A

机构：

来源：

PROCEEDINGS OF THE IEEE | 1963年 / 51卷 / 10期

关键词：

D O I：

10.1109/PROC.1963.2573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1362 / &

共 11 条

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ELLETT, MR ;

KUGLIN, CD .

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[2]

CUFF KF, 1962, P INT C PHYSICS SEMI

[3] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].

ESAKI, L .

PHYSICAL REVIEW, 1958, 109 (02) :603-604

[4]

HALL RN, 1961, J APPL PHYS S, V32, P2978

[5]

Kanai Y., 1963, JAPANESE J APPL PHYS, V2, P6

[6] THEORY OF TUNNELING [J].

KANE, EO .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) :83-+

[7]

Kovalchyk T., 1956, ZH TEKH FIZ, V26, P2417

[8] MAGNETOTUNNELING IN LEAD TELLURIDE [J].

REDIKER, RH ;

CALAWA, AR .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2189-&

[9] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[10]

SCHOCKLEY W, 1949, BELL SYS TECH J, V28, P101

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