ARSENIC AND GALLIUM ATOM LOCATION ON SILICON (111)

被引：42

作者：

PATEL, JR ^{[1
]}

ZEGENHAGEN, J ^{[1
]}

FREELAND, PE ^{[1
]}

HYBERTSEN, MS ^{[1
]}

GOLOVCHENKO, JA ^{[1
]}

CHEN, DM ^{[1
]}

机构：

[1] HARVARD UNIV,DEPT PHYS,CAMBRIDGE,MA 02142

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：894 / 900

页数：7

共 21 条

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