IMAGING OF NEAR-NEIGHBOR ATOMS IN SEMICONDUCTORS BY PHOTOELECTRON HOLOGRAPHY

被引：48

作者：

HERMAN, GS

THEVUTHASAN, S

TRAN, TT

KIM, YJ

FADLEY, CS

机构：

[1] Department of Chemistry, University of Hawaii, Honolulu

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.68.650

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have measured and calculated the full intensity profiles for Si 2p photoelectron emission from Si(111), and have analyzed these via a two-dimensional Fourier-transform holographic inversion procedure. The resulting images associated with two symmetry-inequivalent emitter types exhibit elongated features corresponding to near-neighbor atoms in the first (111) double layer above a given emitter, and are found to improve in quality if strong forward-scattering peaks are removed in a smooth way.

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页码：650 / 653

页数：4

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