25 GBIT/S SELECTOR MODULE USING 0.2-MU-M GAAS-MESFET TECHNOLOGY

被引：17

作者：

OHHATA, M

TOGASHI, M

MURATA, K

YAMAGUCHI, S

机构：

[1] NTT LSI Laboratories, Kanagawa-Pref. 243-01, 3-1, Morinosato, Wakamiya, Atsugi-shi

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 11期

关键词：

INTEGRATED CIRCUITS; FIELD-EFFECT TRANSISTORS;

D O I：

10.1049/el:19930633

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-speed selector module has been developed. It is constructed from a selector IC mounted in a ceramic package, a power supply unit, phase shifters, and coaxial cables. The IC was designed using LSCFL and fabricated with 0.2 mum gate length GaAs MESFETs. The selector module operated above 25 Gbit/s. It is expected to be applied to high-speed IC measurements.

引用

页码：950 / 951

页数：2