STATIC AND DYNAMIC CHARACTERIZATION OF SI MEMBRANES

被引：1

作者：

LANGE, V

HIGELIN, G

机构：

[1] FH-Furtwangen, Mikrosystemtechnik, Furtwangen, D-78120

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1995年 / 46卷 / 1-3期

关键词：

SILICON; MEMBRANES;

D O I：

10.1016/0924-4247(94)00859-G

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin Si films have been characterized by the application of nondestructive optical methods. Reflectance interferometry has been used to determine the thickness of electrochemically etched Si films in the range 0.5-25 mu m. The method is suitable for the end point detection during the etching process. It will be shown that Michelson interferometry can be applied to analyze the amplitude and the functional behaviour of the oscillatory motion of thin Si films.

引用

页码：47 / 50

页数：4

共 6 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].