STRUCTURE AND PHOTOELECTRIC BEHAVIOR OF AMORPHOUS-SEMICONDUCTORS IN THE SYSTEM PBS-GES-GES2

被引：12

作者：

BHATIA, KL ^{[1
]}

KATYAL, SC ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1982年 / 50卷 / 01期

关键词：

D O I：

10.1016/0022-3093(82)90198-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：39 / 48

页数：10

共 19 条

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BHATIA, KL ;

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[2]

BHAT PK, 1978, PHYS CHEM GLASSES, V19, P55

[3] ELECTRICAL-CONDUCTIVITY AND PHOTOCONDUCTIVITY OF AS2S3-PBS GLASSES [J].

BHAT, PK ;

BHATIA, KL ;

KATYAL, SC .

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[4]

BHAT PK, 1977, SOL ST COMMUN, P789

[5] FAR INFRARED TRANSMISSION AND STRUCTURE OF PB-GE-S SEMICONDUCTING GLASSES [J].

BHATIA, KL ;

KATYAL, SC ;

VENUGOPALAN, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 31 (03) :333-337

[6] POOLE FRENKEL CONTROLLED CHARGE CARRIER TRANSPORT OF AMORPHOUS LAYERS GE4SE5TE IN THE MODEL OF CHARGED DANGLING BONDS [J].

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KAHNT, H .

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[7] GLASS-FORMING AND PROPERTIES OF CHALCOGENIDE SYSTEMS .4. LEADTHIOGERMANATE (II,IV) GLASSES AND THEIR PROPERTIES [J].

FELTZ, A ;

VOIGT, B .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1974, 403 (01) :61-71

[8] GLASS-FORMATION AND PROPERTIES OF CHALCOGENIDE SYSTEMS .18. GLASS-FORMATION IN THE SYSTEM GE-PB-SE-TE [J].

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KLEY, G ;

LINKE, I .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 33 (03) :299-309

[9] EVALUATION OF GLASS-FORMING TENDENCY BY MEANS OF DTA [J].

HRUBY, A .

CZECHOSLOVAK JOURNAL OF PHYSICS SECTION B, 1972, B 22 (11) :1187-&

[10] ELASTIC PROPERTIES OF PBS-AS2S3 GLASSES [J].

KATYAL, SC ;

BHATIA, KL ;

PADAKI, VC ;

BHAT, PK ;

GOPAL, ESR .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (12) :L479-L482

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