SELF-STARTING SOLITON MODELOCKED TI-SAPPHIRE LASER USING A THIN SEMICONDUCTOR SATURABLE ABSORBER

被引：51

作者：

BROVELLI, LR

JUNG, ID

KOPF, D

KAMP, M

MOSER, M

KARTNER, FX

KELLER, U

机构：

[1] Swiss Federal Institute of Technology, Institute of Quantum Electronics

[2] Paul Scherrer institute

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 04期

关键词：

SOLID LASERS; LASER MODE LOCKING;

D O I：

10.1049/el:19950184

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a 15 nm-thick antireflection-coated GaAs absorber layer on an AlGaAs/AlAs Bragg mirror as a nonlinear reflector, we achieved self-starting passive modelocking of a Ti-Sapphire laser with 34fs pulses without Kerr lens modelocking.

引用

页码：287 / 289

页数：3

共 10 条

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