OXIDE THICKNESS DEPENDENCE OF HIGH-ENERGY ELECTRON-INDUCED, VUV-INDUCED, AND CORONA-INDUCED CHARGE IN MOS CAPACITORS

被引：30

作者：

HUGHES, GW ^{[1
]}

POWELL, RJ ^{[1
]}

WOODS, MH ^{[1
]}

机构：

[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

关键词：

D O I：

10.1063/1.89093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：377 / 379

页数：3

共 7 条

AUBUCHON, KG .

DERBENWICK, GF ;

GREGORY, BL .

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JOHNSON, WC .

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POWELL, RJ ;

DERBENWICK, GF .

[6]

POWELL RJ, 1975, N0001474C0185 CONTR

[7] HOLE TRAPS IN SILICON DIOXIDE [J].

WOODS, MH ;

WILLIAMS, R .