ION CHANNELING STUDY OF RADIATION-INDUCED DEFECTS IN A BENT SILICON CRYSTAL

被引：5

作者：

WANG, GH

CONG, PJ

GIBSON, WM

SUN, CR

KIM, IJ

SALMAN, S

PISHARODY, M

BAKER, SI

CARRIGAN, RA

FORSTER, JS

MITCHELL, IV

机构：

[1] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

[2] FERMI NATL ACCELERATOR LAB,BATAVIA,IL 60510

[3] CHALK RIVER NUCL LABS,CHALK RIVER,ONTARIO,CANADA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 218卷 / 1-3期

关键词：

D O I：

10.1016/0167-5087(83)91062-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：669 / 672

页数：4

共 10 条

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