DETERMINATION OF MAGNITUDE, PHASE, AND TEMPERATURE-DEPENDENCE OF FORBIDDEN REFLECTIONS IN SILICON AND GERMANIUM

被引：49

作者：

TISCHLER, JZ ^{[1
]}

BATTERMAN, BW ^{[1
]}

机构：

[1] CORNELL UNIV,SCH APPL & ENGN PHYS,CORNELL HIGH ENERGY SYNCHROTRON SOURCE,ITHACA,NY 14853

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.30.7060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7060 / 7066

页数：7

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