BULK EXCITON POLARITONS IN GAAS MICROCAVITIES

被引：76

作者：

CHEN, Y ^{[1
]}

TREDICUCCI, A ^{[1
]}

BASSANI, F ^{[1
]}

机构：

[1] SCUOLA NORMALE SUPER PISA,I-56126 PISA,ITALY

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.52.1800

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical properties of excitons in thin layers are significantly different from those in bulk crystals. In particular, we study the case of a bulk material of thickness comparable with the wavelength of the excitonic transition confined on one or on both sides by appropriate Bragg reflectors. If-the cavity resonance quasimode is carefully tuned on the excitonic transition, strong exciton-photon coupling takes place and produces a Rabi-like splitting as large as that observed in quantum-well-implanted microcavities and comparable optical absorption. In addition, the polaritonic spatial dispersion and the quantization of the exciton center-of-mass motion introduce remarkable fine structures which are absent in the quantum-well case. We demonstrate the above effects from a spectroscopic analysis of GaAs cavities and compare them with those displayed by quantum-well-implanted microcavities.

引用

页码：1800 / 1805

页数：6

共 21 条

[1] NONGUIDING HALF-WAVE SEMICONDUCTOR MICROCAVITIES DISPLAYING THE EXCITON-PHOTON MODE SPLITTING [J].