FORGIVING LENS FOR ANGULAR-DEPENDENT ELECTRON SPECTROMETRY

被引：3

作者：

BEST, PE

机构：

[1] UNIV CONNECTICUT,DEPT PHYS,STORRS,CT 06268

[2] UNIV CONNECTICUT,INST MAT SCI,STORRS,CT 06268

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1977年 / 48卷 / 06期

关键词：

D O I：

10.1063/1.1135111

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：696 / 697

页数：2

共 10 条

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[2] ENERGY-DEPENDENT AND ANGULAR-DEPENDENT SECONDARY-ELECTRON EMISSION FROM A SILICON (111) 7X7 SURFACE - EMISSION FROM BULK STATES [J].

BEST, PE .

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[3] INELASTIC LOW-ENERGY ELECTRON-DIFFRACTION FROM A SILICON (111) 7X7 SURFACE [J].

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[5]

PIERCE JR, 1954, THEORY DESIGN ELECTR, P104

[6]

PORTEUS JO, 1973, PHYS REV B, V8, P491, DOI 10.1103/PhysRevB.8.491

[7] HIGH RESOLUTION LOW ENERGY ELECTRON SPECTROMETER [J].

SIMPSON, JA .

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[8] ANGULAR DEPENDENCE OF PHOTOEMISSION FROM (110) FACE OF GAAS [J].

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TRAUM, MM .

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[9]

SPANGENBERG KR, 1968, VACUUM TUBES, P373

[10] HIGH-RESOLUTION LOW-ENERGY ELECTRON DIFFRACTOMETER [J].

WENDELKEN, JF ;

PROPST, FM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1976, 47 (09) :1069-1078

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