ON THE SPUTTERING YIELD OF MOLECULAR-IONS

被引：20

作者：

STEINBRUCHEL, C ^{[1
]}

机构：

[1] RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 05期

关键词：

D O I：

10.1116/1.572944

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1913 / 1915

页数：3

共 19 条

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[4]

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[6]

ROTH J, 1983, TOP APPL PHYS, V52, P91

[7]

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[8] REACTIVE ION-BEAM ETCHING - DISSOCIATION OF MOLECULAR-IONS UPON IMPACT [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01) :38-44

[9] A SIMPLE FORMULA FOR LOW-ENERGY SPUTTERING YIELDS [J].

STEINBRUCHEL, C .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (01) :37-42

[10] MECHANISM OF DRY ETCHING OF SILICON DIOXIDE - A CASE OF DIRECT REACTIVE ION ETCHING [J].

STEINBRUCHEL, C ;

LEHMANN, HW ;

FRICK, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) :180-186

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