FABRICATION OF ENCAPSULATED SILICON-VACUUM FIELD-EMISSION TRANSISTORS AND DIODES

被引：10

作者：

SUNE, CT

JONES, GW

VELLENGA, D

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.585957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have succeeded in developing encapsulated silicon-vacuum field-emission transistors by using integrated circuit technology. This success will accelerate the development of integrated circuit of silicon-vacuum field-emission devices. Preliminary electrical characteristics of these encapsulated silicon-vacuum field-emission transistors show very similar characteristics to the gated field-emitter diode. However, the turn-on voltage and the transconductance are lower compared to the open gated field emitters.

引用

页码：2984 / 2988

页数：5

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