MODEL FOR FACET AND SIDEWALL DEFECT FORMATION DURING SELECTIVE EPITAXIAL-GROWTH OF (001) SILICON

被引：67

作者：

DROWLEY, CI

REID, GA

HULL, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.99412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：546 / 548

页数：3

共 12 条

[1] STACKING FAULT ENERGY IN SILICON [J].

AERTS, E ;

SIEMS, R ;

DELAVIGNETTE, P ;

AMELINCKX, S .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) :3078-&

[2]

BORLAND JO, 1985, SOLID STATE TECHNOL, V28, P141

[3] CONTROL OF LATERAL EPITAXIAL CHEMICAL VAPOR-DEPOSITION OF SILICON OVER INSULATORS [J].

BRADBURY, DR ;

KAMINS, TI ;

TSAO, CW .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :519-523

[4]

DROWLEY CI, 1983, UNPUB

[5]

ENDO N, 1986, IEEE T ELECTRON DEV, V33, P1659, DOI 10.1109/T-ED.1986.22725

[6] FACET FORMATION IN SELECTIVE SILICON EPITAXIAL-GROWTH [J].

ISHITANI, A ;

KITAJIMA, H ;

ENDO, N ;

KASAI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (10) :1267-1269

[7] CRYSTALLINE DEFECTS IN SELECTIVELY EPITAXIAL SILICON LAYERS [J].

KITAJIMA, H ;

ISHITANI, A ;

ENDO, N ;

TANNO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (12) :L783-L785

[8]

KITAJIMA H, 1986, SEMICONDUCTOR SILICO, P833

[9] MICROTWIN AND TRI-PYRAMID FORMATION IN EPITAXIAL SILICON FILMS [J].

MENDELSON, S .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1573-+

[10]

Nishizawa J.-I., 1972, Journal of Crystal Growth, V13-14, P297, DOI 10.1016/0022-0248(72)90173-X

← 1 2 →