THE ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY GROWN INXGA1-XAS ON GAAS

被引：8

作者：

KIM, TS

SHIH, HD

ANTHONY, JM

DUNCAN, WM

FARRINGTON, DL

KEENAN, JA

MOORE, TM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584754

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：376 / 379

页数：4

共 12 条

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