HIGH-FREQUENCY SMALL-SIGNAL MODULATION CHARACTERISTICS OF SHORT-CAVITY INGAASP LASERS

被引：14

作者：

TUCKER, RS ^{[1
]}

LIN, C ^{[1
]}

BURRUS, CA ^{[1
]}

BESOMI, P ^{[1
]}

NELSON, RJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 10期

关键词：

D O I：

10.1049/el:19840272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：393 / 394

页数：2

共 6 条

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) :1718-1727

[2]

KOREN U, 1982, IEEE J QUANTUM ELECT, V18, P1653, DOI 10.1109/TMTT.1982.1131303

[3]

LAU KY, 1984, JAN OFC84 NEW ORL

[4] 11.2 GHZ PICOSECOND OPTICAL PULSE GENERATION IN GAIN-SWITCHED SHORT-CAVITY INGAASP INJECTION-LASERS BY HIGH-FREQUENCY DIRECT MODULATION [J].

LIN, CL ;

BURRUS, CA ;

EISENSTEIN, G ;

TUCKER, RS ;

BESOMI, P ;

NELSON, RJ .

ELECTRONICS LETTERS, 1984, 20 (06) :238-240

[5] DOUBLE-CHANNEL PLANAR BURIED-HETEROSTRUCTURE LASER DIODE WITH EFFECTIVE CURRENT CONFINEMENT [J].

MITO, I ;

KITAMURA, M ;

KOBAYASHI, K ;

KOBAYASHI, K .

ELECTRONICS LETTERS, 1982, 18 (22) :953-954

[6] MICROWAVE CIRCUIT MODELS OF SEMICONDUCTOR INJECTION-LASERS [J].

TUCKER, RS ;

POPE, DJ .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (03) :289-294

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