THE EFFECTS OF HYDROGEN AMBIENTS ON ELECTROMIGRATION KINETICS IN A1-2-PERCENT CU THIN-FILM CONDUCTORS

被引：3

作者：

PASCO, RW ^{[1
]}

FELTON, LE ^{[1
]}

SCHWARZ, JA ^{[1
]}

机构：

[1] SYRACUSE UNIV,DEPT CHEM ENGN & MAT SCI,SYRACUSE,NY 13210

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 11期

关键词：

D O I：

10.1016/0038-1101(83)90002-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1053 / 1063

页数：11

共 27 条

[1]

BENZING WC, 1982, ELECTRONICS, V25, P116

[2] SUPERIOR ALUMINUM FOR INTERCONNECTIONS OF INTEGRATED CIRCUITS [J].

BHATT, HJ .

APPLIED PHYSICS LETTERS, 1971, 19 (02) :30-&

[3]

BLACK JR, 1978, P IEEE REL PHYS S, P233

[4]

BLACKBURN DA, 1977, ELECTRO THERMOTRANSP, P33

[5] NUCLEATION RATE OF VACANCY CLUSTERS IN ALUMINUM [J].

DAVIS, TL .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3756-&

[6] KINETICS OF VACANCY MOTION IN HIGH-PURITY ALUMINUM [J].

DESORBO, W ;

TURNBULL, D .

PHYSICAL REVIEW, 1959, 115 (03) :560-563

[7] QUENCHING OF IMPERFECTIONS IN ALUMINUM [J].

DESORBO, W ;

TURNBULL, D .

ACTA METALLURGICA, 1959, 7 (02) :83-85

[8]

DHEURLE FM, 1977, 7TH P INT VAC C 3RD, P2123

[9]

FISCHER F, 1977, P IEEE ANN RELIABILI, P250

[10] EFFECTS OF OXYGEN ION-IMPLANTATION ON THE STRUCTURE AND PROPERTIES OF ALUMINUM THIN-FILMS [J].

GANGULEE, A ;

DHEURLE, FM ;

RANIERI, VA ;

FIORIO, RA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :156-159

← 1 2 3 →