SIC AMORPHIZATION AS A RESULT OF GA+ IMPLANTATION

被引：7

作者：

TULINOV, AF

CHECHENIN, NG

BOURDELLE, KK

MAKAROV, VN

SUVOROV, AV

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 33卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(88)90683-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：788 / 791

页数：4

共 13 条

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[3]

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NARAYAN, J .

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[5]

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[6]

LEWIS MB, 1985, NUCL INSTRUM METH B, V7-8, P530, DOI 10.1016/0168-583X(85)90427-6

[7]

MAYER JW, 1977, ION BEAM HDB MATERIA

[8] DAMAGE ACCUMULATION IN CERAMICS DURING ION-IMPLANTATION [J].

MCHARGUE, CJ ;

FARLOW, GC ;

BEGUN, GM ;

WILLIAMS, JM ;

WHITE, CW ;

APPLETON, BR ;

SKLAD, PS ;

ANGELINI, P .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 16 (2-3) :212-220

[9]

RYSSEL H, 1978, IONEIMPLANTATION

[10] ION-BEAM MODIFICATION OF 6H/15R SIC CRYSTALS [J].

SPITZNAGEL, JA ;

WOOD, S ;

CHOYKE, WJ ;

DOYLE, NJ ;

BRADSHAW, J ;

FISHMAN, SG .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 16 (2-3) :237-243

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