KINETICS OF DISSOLUTION OF SILICON IN CRO3-HF-H2O SOLUTIONS

被引:7
作者
HEIMANN, RB [1 ]
机构
[1] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA
关键词
D O I
10.1007/BF01120043
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:1314 / 1320
页数:7
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共 24 条
[1]   A STUDY OF THE ETCHING RATE OF SINGLE-CRYSTAL GERMANIUM [J].
CAMP, PR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1955, 102 (10) :586-593
[2]   CONTAMINANTS ON CHEMICALLY ETCHED SILICON SURFACES - LEED-AUGER METHOD [J].
CHANG, CC .
SURFACE SCIENCE, 1970, 23 (02) :283-&
[3]   CHARACTERISTIC ENERGIES IN SECONDARY ELECTRON SPECTRA FROM SI(111) SURFACES [J].
CHUNG, MF ;
JENKINS, LH .
SURFACE SCIENCE, 1971, 26 (02) :649-&
[4]  
DARAGONA FS, 1972, J ELECTROCHEM SOC, V119, P948
[5]  
GLENDINNING WB, 1972, ECOM4061 US ARM EL C
[6]   DISSOLUTION FORMS OF GAAS SINGLE-CRYSTAL SPHERES [J].
HEIMANN, RB .
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1977, 104 (1-3) :11-22
[7]  
HEIMANN RB, THIN SOLID FILMS
[8]  
HEIMANN RB, 1982, CRYSTALS GROWTH PROP, V8, P207
[9]   SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .1. THEORY [J].
HO, CP ;
PLUMMER, JD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) :1516-1522
[10]   STUDY OF DISSOLUTION OF SIO2 IN ACIDIC FLUORIDE SOLUTIONS [J].
JUDGE, JS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1772-&