TIME-DEPENDENT ETCHING OF GAAS AND INP WITH CCL4 OR HCL PLASMAS - ELECTRODE MATERIAL AND OXIDANT ADDITION EFFECTS

被引：21

作者：

SMOLINSKY, G

GOTTSCHO, RA

ABYS, SM

机构：

来源：

关键词：

D O I：

10.1063/1.332418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3518 / 3523

页数：6

共 21 条

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