共 24 条
- [1] GALLIUM ARSENIDE SURFACE STRUCTURE AND REACTION KINETICS - FIELD EMISSION MICROSCOPY[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3057 - &ARTHUR, JR
- [2] ARTHUR JR, UNPUBLISHED
- [3] BECKER JA, 1953, J PHYS CHEM-US, V57, P157
- [4] SYSTEMATICS OF EVAPORATION COEFFICIENT AL2O3 GA2O3 IN2O3[J]. JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (09) : 3307 - +BURNS, RP
- [5] THE KINETICS AND MECHANISM OF FORMATION OF ANODE FILMS ON SINGLE-CRYSTAL INSB[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) : 244 - 251DEWALD, JF
- [6] KINETIC AND EXPERIMENTAL BASIS OF FLASH DESORPTION[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 4 - &EHRLICH, G
- [7] MOLECULAR DISSOCIATION AND RECONSTITUTION ON SOLIDS[J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 31 (04) : 1111 - 1126EHRLICH, G
- [8] PRESSURE OF GA2O OVER GALLIUM-GA2O3 MIXTURES[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1962, 66 (05) : 877 - &FROSCH, CJTHURMOND, CD
- [9] CHEMISORPTION OF NITROGEN ON TUNGSTEN[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (09) : 1280 - &GURI, T
- [10] STRUCTURE-SENSITIVE CHEMISORPTION - THE MECHANISM OF DESORPTION FROM TUNGSTEN[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) : 47 - +HICKMOTT, TW