ACCURACY OF THE CHEMICAL-PSEUDOPOTENTIAL METHOD FOR TETRAHEDRAL SEMICONDUCTORS

被引:8
作者
FOULKES, WMC
机构
[1] Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ, Prince Consort Road
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 19期
关键词
D O I
10.1103/PhysRevB.48.14216
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Simple two-center tight-binding models have often been used in electronic-structure calculations, although uncertainty about the foundations of the tight-binding method has severely limited progress. This uncertainty has been much reduced following the recent successes of the non-self-consistent Harris scheme but several important questions still remain. In particular, the accuracy of the (almost ubiquitous) two-center approximation is still in doubt. It has often been argued that although this is a poor approximation when applied crudely, it can be justified within the more sophisticated context of chemical-pseudopotential theory. The argument looks sensible, but clear quantitative tests only became possible with the advent of the Harris scheme. This paper reports a careful series of tests of the accuracy of the two-center approximation for germanium, and shows that neither the crude version nor the more sophisticated chemical-pseudopotential version is accurate enough to be useful. The remarkable success of two-center tight binding in predicting the structures and surface reconstructions of semiconductors is, therefore, still mysterious.
引用
收藏
页码:14216 / 14225
页数:10
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