OPTICAL MEASUREMENTS AND TEMPERATURE-DEPENDENCE OF THE ENERGY-GAP IN ZNIN2S4 LAYERED COMPOUND

被引：5

作者：

ANAGNOSTOPOULOS, A

KAMBAS, K

PLOSS, B

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1984年 / 123卷 / 02期

关键词：

D O I：

10.1002/pssb.2221230259

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K155 / K159

页数：5

共 23 条

[1] ELECTRICAL-CONDUCTIVITY OF ZNIN2S4 MODULATED BY A PERPENDICULAR APPLIED ELECTRIC-FIELD [J].

ANAGNOSTOPOULOS, A ;

SPYRIDELIS, I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02) :K127-K130

[2] COMPOSITION FAULTS IN ZNIN2S4(III) LAYERED CRYSTALS AND THEIR INFLUENCE ON THE ANISOTROPIC CONDUCTIVITY OF THIS COMPOUND [J].

ANAGNOSTOPOULOS, AN ;

MANOLIKAS, C ;

PAPADOPOULOS, D ;

SPYRIDELIS, J .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02) :731-736

[3] INFLUENCE OF COMPOSITION FAULTS ON THE AC CONDUCTIVITY OF ZNIN2S4 (III) [J].

ANAGNOSTOPOULOS, AN .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 75 (02) :595-599

[4]

BERGER LI, 1969, TERNARY DIAMOND LIKE, P86

[5] OPTICAL PROPERTIES OF A QUASI-DISORDERED SEMICONDUCTOR - ZNIN2S4 [J].

BOSACCHI, A ;

BOSACCHI, B ;

FRANCHI, S ;

HERNANDEZ, L .

SOLID STATE COMMUNICATIONS, 1973, 13 (11) :1805-1809

[6]

DONIKA G, 1971, SOVIET PHYS CRYSTALL, V15, P695

[7] OPTICAL-PROPERTIES OF LAYERED SEMICONDUCTOR ZNIN2S4 [J].

GIORGIANNI, U ;

GRASSO, V ;

MONDIO, G ;

SAITTA, G .

PHYSICS LETTERS A, 1978, 68 (02) :247-248

[8] RECOMBINATION PROCESS OF PHOTOEXCITED CARRIERS IN ZNIN2S4 [J].

GRILLI, E ;

GUZZI, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 40 (01) :69-74

[9] TEMPERATURE-DEPENDENCE OF ABSORPTION-EDGE IN CUINSE2 [J].

HORIG, W ;

NEUMANN, H ;

HOBLER, HJ ;

KUHN, G .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 80 (01) :K21-K24

[10]

Johnson E. J., 1967, SEMICONDUCTORS SEMIM, V3, P153

← 1 2 3 →