THE USE OF LINEAR PREDICTIVE MODELING FOR THE ANALYSIS OF TRANSIENTS FROM EXPERIMENTS ON SEMICONDUCTOR DEFECTS

被引：30

作者：

SHAPIRO, FR ^{[1
]}

SENTURIA, SD ^{[1
]}

ADLER, D ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332953

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3453 / 3459

页数：7

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