A STUDY OF OXYGEN PRECIPITATION IN SILICON USING HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, SMALL-ANGLE NEUTRON-SCATTERING AND INFRARED-ABSORPTION

被引：67

作者：

BERGHOLZ, W

BINNS, MJ

BOOKER, GR

HUTCHISON, JC

KINDER, SH

MESSOLORAS, S

NEWMAN, RC

STEWART, RJ

WILKES, JG

机构：

[1] PHILIPS COMPONENTS,MILLBROOK IND ESTATE,SOUTHAMPTON SO9 7BH,ENGLAND

[2] UNIV READING,JJ THOMSON PHYS LAB,READING RG6 2AF,BERKS,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1989年 / 59卷 / 05期

关键词：

D O I：

10.1080/13642818908211173

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：499 / 522

页数：24

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