ON THE ORIGIN OF AN ENERGY-GAP IN SEMICONDUCTING MIXED-VALENT RARE-EARTH COMPOUNDS

被引:14
作者
KASAYA, M
机构
[1] Department of Physics, Faculty of Science, Tohoku University
关键词
GAP STATE; VALENCE FLUCTUATION; YBB12; CE3PT3SB4; SMB6;
D O I
10.1143/JPSJ.61.3841
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Results of recent band calculations on SmB6, YbB12, Ce3Pt3Sb4 and CeNiSn support our previous prediction that the band gap appearing in their non-f reference systems correlates strongly with the origin of an energy gap in the mixed-valent rare-earth compounds. Based on these results, a more detailed model on the mechanism of the appearance of an energy gap is discussed.
引用
收藏
页码:3841 / 3844
页数:4
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