LITHOGRAPHIC EVALUATION OF A NEW WET SILYLATION PROCESS USING SAFE SOLVENTS AND THE COMMERCIAL PHOTORESIST AZ 5214E(TM)

被引：3

作者：

GOGOLIDES, E

BAIK, KH

YANNAKOPOULOU, K

VANDENHOVE, L

HATZAKIS, M

机构：

[1] Inter University Microelectronics Centre IMEC vzw, B-3001 Leuven

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

Bilayer resist scheme - Photoresist AZ 5214E - Surface imaging techniques - Wet silylation;

D O I：

10.1016/0167-9317(94)90152-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A positive-tone wet silylation process for I-line lithography is developed, using safe solvents and the commercial photoresist. AZ 5214B (by Hoechst). The process is capable of resolving 0.3 mu m lines and spaces on photoresist. Various silylating conditions, solution concentrations and two silylating agents namely HMCTS and B(DMA)DS have been tried. Silicon concentration, focus and exposure latitudes have been defined.

引用

页码：267 / 270

页数：4

共 6 条

[1]

Shaw, Hatzakis, Babich, Paraszczak, Whitman, Stewart, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 7 B, (1989)

[2]

Baik, Van den hove, Roland, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 9 B, 6, pp. 3399-3405, (1991)

[3]

Gogolides, Et al., Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 10 B, (1992)

[4]

Baik, Et al., Proc. SPIE, 1672, (1992)

[5]

Gogolides, Et al., Microelectronic Engineering, 21, (1993)

[6]

van Look, Silylating Agents, Fluka Chemika, (1988)

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