STUDY OF A CMOS-JFET-BIPOLAR RADIATION-HARD ANALOG-DIGITAL TECHNOLOGY SUITABLE FOR HIGH-ENERGY PHYSICS ELECTRONICS

被引：26

作者：

DENTAN, M

DELAGNES, E

FOURCHES, N

ROUGER, M

HABRARD, MC

BLANQUART, L

DELPIERRE, P

POTHEAU, R

TRUCHE, R

BLANC, JP

DELEVOYE, E

GAUTIER, J

PELLOIE, JL

DEPONTCHARRA, J

FLAMENT, O

LERAY, JL

MARTIN, JL

MONTARON, J

MUSSEAU, O

机构：

[1] CPPM,IN2P3,F-13288 MARSEILLE,FRANCE

[2] CENG,DMEL,CEA TECHNOL AVANCEES,LETI,F-38041 GRENOBLE,FRANCE

[3] CTR ETUD NUCL BRUYERES LE CHATEL,CEA,F-91680 BRUYERES CHATEL,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/23.273505

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present here recent results obtained on a rad-hard mixed analog-digital technology currently under development, which integrates monolithically complementary MOS transistors (CMOS), complementary JFETs (CJFETs) and complementary bipolrr transistors (C-bipolars). This technology is expected to fulfill the hard constraints of LHC detector electronics.

引用

页码：1555 / 1560

页数：6