CARRIER CAPTURE BY MULTIPHONON EMISSION AT EXTRINSIC DEEP CENTERS INDUCED BY SELF-TRAPPING IN GAAS

被引：4

作者：

GOTO, H ^{[1
]}

ADACHI, Y ^{[1
]}

IKOMA, T ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

关键词：

D O I：

10.1063/1.332245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1909 / 1923

页数：15

共 34 条

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