AN EXTENDED THEORY FOR HOPPING TRANSPORT IN A-GE AND A-SI

被引：26

作者：

ORTUNO, M ^{[1
]}

POLLAK, M ^{[1
]}

机构：

[1] UNIV CALIF RIVERSIDE,DEPT PHYS,RIVERSIDE,CA 92521

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90523-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：53 / 56

页数：4

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[7] THICKNESS DEPENDENCE OF HOPPING TRANSPORT IN AMORPHOUS-GE FILMS [J].

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[8] TEMPERATURE AND THICKNESS DEPENDENCE OF LOW-TEMPERATURE TRANSPORT IN AMORPHOUS SILICON THIN-FILMS - COMPARISON TO AMORPHOUS-GERMANIUM [J].

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[9]

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