MECHANISM FOR DISLOCATION DENSITY REDUCTION IN GAAS CRYSTALS BY INDIUM ADDITION

被引：118

作者：

EHRENREICH, H ^{[1
]}

HIRTH, JP ^{[1
]}

机构：

[1] OHIO STATE UNIV,DEPT MET ENGN,COLUMBUS,OH 43210

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 07期

关键词：

D O I：

10.1063/1.95523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：668 / 670

页数：3

共 12 条

[1]

Burenkov Yu. A., 1973, Soviet Physics - Solid State, V15, P1175

[2] EFFECTS OF CHEMICAL AND STRUCTURAL DISORDER IN SEMICONDUCTING PSEUDOBINARY ALLOYS [J].

HASS, KC ;

LEMPERT, RJ ;

EHRENREICH, H .

PHYSICAL REVIEW LETTERS, 1984, 52 (01) :77-80

[3]

HIRTH JP, 1982, THEORY DISLOCATIONS, pCH2

[4] AN EVALUATION OF THE THERMAL AND ELASTIC-CONSTANTS AFFECTING GAAS CRYSTAL-GROWTH [J].

JORDAN, AS .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) :631-642

[5] EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF GA1-XINXAS RANDOM SOLID-SOLUTIONS [J].

MIKKELSEN, JC ;

BOYCE, JB .

PHYSICAL REVIEW B, 1983, 28 (12) :7130-7140

[6] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS [J].

OSBOURN, GC .

PHYSICAL REVIEW B, 1983, 27 (08) :5126-5128

[7]

Peckner D., 1964, STRENGTHENING METALS, P114

[8]

SHER A, COMMUNICATION

[9] TEMPERATURE AND ORIENTATION DEPENDENCE OF PLASTIC-DEFORMATION IN GAAS SINGLE-CRYSTALS DOPED WITH SI, CR, OR ZN [J].

SWAMINATHAN, V ;

COPLEY, SM .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1975, 58 (11-1) :482-485

[10]

THOMAS R, COMMUNICATION

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