FREE-CARRIER CONCENTRATION IN N-DOPED INP CRYSTALS DETERMINED BY RAMAN-SCATTERING MEASUREMENTS

被引：24

作者：

BOUDART, B ^{[1
]}

PREVOT, B ^{[1
]}

SCHWAB, C ^{[1
]}

机构：

[1] METAUX SPECIAUX SA,F-73600 MOUTIERS,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1991年 / 50卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(91)90185-M

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Raman spectra from n-InP samples covering a wide range of concentrations (approximately 10(16) to 10(19) cm-3) have been measured. Free-carrier concentrations deduced from the analysis of the upper LO phonon-plasmon coupled modes are compared with values obtained from conventional electrical determinations. It is found that a tight 1 to 1 correlation exists between the results of the two techniques, thus confirming Raman scattering as a powerful analytical tool for the characterization of InP substrates.

引用

页码：295 / 299

页数：5

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