IMPROVED FORM OF OSCILLATING ELECTRON ELECTROSTATIC ION-SOURCE FOR ION ETCHING

被引：10

作者：

GHANDER, AM ^{[1
]}

FITCH, RK ^{[1
]}

机构：

[1] UNIV ASTON,DEPT PHYS,GOSTA GREEN,BIRMINGHAM B4 7ET,ENGLAND

来源：

关键词：

D O I：

10.1016/0042-207X(74)90014-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：483 / 487

页数：5

共 9 条

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[2] FRANKS J, Patent No. 5462772
[3] GHANDER AM, IN PRESS
[4] HOLLAND L, 1972, ELECTRONIC COMPONENT, V5, P493
[5] CHARGED-PARTICLE OSCILLATOR
MCILRAIT.AH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01): : 209 - &
[6] ION-BEAM POLISHING OF GLASS
PEARSON, AD
HARSELL, WB
[J]. MATERIALS RESEARCH BULLETIN, 1972, 7 (06) : 567 - &
[7] SENSITIVE TIME-OF-FLIGHT MOLECULAR-BEAM DETECTOR
PEGGS, GN
MCILRAIT.AH
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1973, 6 (11): : 1137 - 1139
[8] MODES OF OPERATION OF AN ELECTROSTATIC ION GUN
RUSHTON, GJ
OSHEA, KR
FITCH, RK
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (10) : 1167 - 1172
[9] YOSHIDA K, 1973, J ELECTRON MICROSC, V22, P5