PHOTOLUMINESCENCE AND INFRARED-SPECTROSCOPY OF ACCEPTORS IN GAAS

[1] BARRA F, 1968, PHYS LETT A, V27, P771

[2] INFRARED-ABSORPTION OF THE 78-MEV ACCEPTOR IN GAAS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 898 - 901

[3] RESIDUAL DOUBLE ACCEPTORS IN BULK GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 274 - 276

[4] MOORE WJ, 1984, UNPUB SEMIINSULATING

[5] EVIDENCE OF THE ROLE OF BORON IN UNDOPED GAAS GROWN BY LIQUID ENCAPSULATED CZOCHRALSKI [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1091 - 1093

[6] WILLIAMS EW, 1972, SEMICONDUCT SEMIMET, V8, P335

[7] PHOTO-LUMINESCENCE IDENTIFICATION OF APPROXIMATELY 77-MEV DEEP ACCEPTOR IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1263 - 1265

[8] EVIDENCE OF INTRINSIC DOUBLE ACCEPTOR IN GAAS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 532 - 534

[9] PHOTO-LUMINESCENCE EXCITATION OF THE 1.441-EV CATION ANTISITE EMISSION IN P-TYPE GAAS [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7779 - 7781

[10] YU PW, 1982, I PHYS C SER, V63, P209

[1] BARRA F, 1968, PHYS LETT A, V27, P771

[2] INFRARED-ABSORPTION OF THE 78-MEV ACCEPTOR IN GAAS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 898 - 901

[3] RESIDUAL DOUBLE ACCEPTORS IN BULK GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 274 - 276

[4] MOORE WJ, 1984, UNPUB SEMIINSULATING

[5] EVIDENCE OF THE ROLE OF BORON IN UNDOPED GAAS GROWN BY LIQUID ENCAPSULATED CZOCHRALSKI [J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1091 - 1093

[6] WILLIAMS EW, 1972, SEMICONDUCT SEMIMET, V8, P335

[7] PHOTO-LUMINESCENCE IDENTIFICATION OF APPROXIMATELY 77-MEV DEEP ACCEPTOR IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1263 - 1265

[8] EVIDENCE OF INTRINSIC DOUBLE ACCEPTOR IN GAAS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 532 - 534

[9] PHOTO-LUMINESCENCE EXCITATION OF THE 1.441-EV CATION ANTISITE EMISSION IN P-TYPE GAAS [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7779 - 7781

[10] YU PW, 1982, I PHYS C SER, V63, P209