THEORY OF TRANSIENT CURRENTS IN DIELECTRICS AT A LIMITED LEVEL OF SINGLE INJECTION .1. THE CASE OF STRONG INJECTION

被引:12
作者
BAGINSKII, IL
KOSTSOV, EG
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 88卷 / 01期
关键词
D O I
10.1002/pssa.2210880137
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:331 / 341
页数:11
相关论文
共 30 条
[1]   SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].
ARNETT, PC ;
YUN, BH .
APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96
[2]   TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J].
ARNETT, PC .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5236-5243
[3]   TRANSIENT SINGLE-INJECTION CURRENTS IN DIELECTRICS AT FAST TRAPPING [J].
BAGINSKII, IL ;
KOSTSOV, EG .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 63 (01) :271-279
[4]  
BAGINSKII IL, 1981, FIZ TEKH POLUPROV, V15, P2209
[5]  
BAGINSKII IL, 1985, PHYS STAT SOL A, V88
[6]  
Baru V. G., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P2142
[7]   COMPUTED TRANSIENT SOLUTION FOR MSM DIODE WITH TRAPS [J].
BOUDRY, MR .
ELECTRONICS LETTERS, 1968, 4 (10) :193-&
[8]  
DEOLIVEIRA L, 1975, J ELECTROSTAT, V1, P371
[9]   NEW RESULTS OF TRANSIENT-BEHAVIOR OF SINGLE INJECTION SCLC DIODES WITH ONE DEEP LEVEL [J].
DUDECK, I ;
KASSING, R .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02) :489-493
[10]  
GARDNER WW, 1959, PHYS REV, V116, P84