CHARACTERIZATION OF SILICON OPEN STENCIL MASKS IN AN ION PROJECTION LITHOGRAPHY MACHINE

被引：2

作者：

BUCHMANN, LM

MESCHEDER, U

TORKLER, M

机构：

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90110-Y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon open stencil masks, realized in a 2-mu-m thick membrane, were investigated with respect to their stress quality, the resistivity against sputter erosion by ion impingement and their response to temperature variations. In a test pattern of an area 20 x 21 mm2 an average distortion of 0.15-mu-m was obtained. The sputter erosion in a nitride top layer under the operating conditions of the projector was found to be 1.5 nm/h.

引用

页码：353 / 356

页数：4

共 13 条

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