PLATINUM BOTTOM ELECTRODES FORMED BY ELECTRON-BEAM EVAPORATION FOR HIGH THIN-FILMS

被引：18

作者：

CHA, SY ^{[1
]}

LEE, HC ^{[1
]}

LEE, WJ ^{[1
]}

KIM, HG ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT MAT SCI & ENGN,TAEJON 305701,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期

关键词：

PT BOTTOM ELECTRODE; ELECTRON-BEAM EVAPORATION; BST FILM; RF MAGNETRON SPUTTERING; STRESS; SURFACE MORPHOLOGY; ELECTRICAL PROPERTIES;

D O I：

10.1143/JJAP.34.5220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Platinum (Pt) bottom electrodes have been prepared on SiO2/Si substrates at various deposition temperatures by electron-beam evaporation. Subsequently, (Ba0.5Sr0.5)TiO3 (BST) films were grown under identical conditions by rf magnetron sputtering. It was found that the crystallinity of BST thin films on the Pt bottom layers was strongly dependent on that of Pt films. The surface morphology of BST films appeared to be closely related to the change in the stress of Pt films during BST deposition. In addition, the stress of Pt fill has been proven to affect the electrical properties such as current-voltage characteristic and capacitance-voltage characteristic.

引用

页码：5220 / 5223

页数：4

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