PHOTOVOLTAGES EXCEEDING THE BAND-GAP OBSERVED WITH WSE2-I- SOLAR-CELLS

被引：13

作者：

ETMAN, M ^{[1
]}

TRIBUTSCH, H ^{[1
]}

BUCHER, E ^{[1
]}

机构：

[1] UNIV CONSTANCE, FAK PHYS, D-7750 CONSTANCE, FED REP GER

来源：

JOURNAL OF APPLIED ELECTROCHEMISTRY | 1981年 / 11卷 / 05期

关键词：

D O I：

10.1007/BF00616686

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：653 / 660

页数：8

共 14 条

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[2]

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[7] THE ROLE OF CARRIER DIFFUSION AND INDIRECT OPTICAL-TRANSITIONS IN THE PHOTOELECTROCHEMICAL BEHAVIOR OF LAYER TYPE D-BAND SEMICONDUCTORS [J].

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[9] RELATIONSHIP BETWEEN SURFACE-MORPHOLOGY AND SOLAR CONVERSION EFFICIENCY OF WSE2 PHOTOANODES [J].

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[10] PHOTOELECTROCHEMICAL COMPATIBILITY OF N-WSE2 AND N-MOSE2 WITH VARIOUS REDOX SYSTEMS [J].

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