REACTIONS OF XEF2 WITH THERMALLY GROWN SIO2

被引：21

作者：

JOYCE, S ^{[1
]}

LANGAN, JG ^{[1
]}

STEINFELD, JI ^{[1
]}

机构：

[1] MIT,DEPT CHEM,CAMBRIDGE,MA 02139

来源：

SURFACE SCIENCE | 1988年 / 195卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(88)90796-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：270 / 282

页数：13

共 46 条

[11]

FADLEY CS, 1981, ELECTRON SPECTROSCOP, V5, P1

[12] REACTION OF FLUORINE-ATOMS WITH SIO2 [J].

FLAMM, DL ;

MOGAB, CJ ;

SKLAVER, ER .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6211-6213

[13] BASIC CHEMISTRY AND MECHANISMS OF PLASMA-ETCHING [J].

FLAMM, DL ;

DONNELLY, VM ;

IBBOTSON, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :23-30

[14] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J].

FLITSCH, R ;

RAIDER, SI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :305-308

[15] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION [J].

GERLACHMEYER, U ;

COBURN, JW ;

KAY, E .

SURFACE SCIENCE, 1981, 103 (01) :177-188

[16] ION ENHANCED GAS-SURFACE REACTIONS - A KINETIC-MODEL FOR THE ETCHING MECHANISM [J].

GERLACHMEYER, U .

SURFACE SCIENCE, 1981, 103 (2-3) :524-534

[17]

HARRISON WA, 1980, ELECTRONIC STRUCTURE, P244

[18]

HOFFMANN S, 1983, J VAC SCI TECHNOL B, V1, P43

[19] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J].

HOLLINGER, G ;

HIMPSEL, FJ .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :93-95

[20] X-RAY PHOTOELECTRON-SPECTROSCOPY OF THERMALLY GROWN SILICON DIOXIDE FILMS ON SILICON [J].

HOLLINGER, G ;

JUGNET, Y ;

PERTOSA, P ;

DUC, TM .

CHEMICAL PHYSICS LETTERS, 1975, 36 (04) :441-445

← 1 2 3 4 5 →