ENERGY-LEVELS OF VANADIUM IONS IN CDTE

被引：22

作者：

PEKA, P ^{[1
]}

LEHR, MU ^{[1
]}

SCHULZ, HJ ^{[1
]}

SCHWARZ, R ^{[1
]}

BENZ, KW ^{[1
]}

机构：

[1] UNIV FREIBURG,INST KRISTALLOG,D-79104 FREIBURG,GERMANY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1994年 / 58卷 / 05期

关键词：

D O I：

10.1007/BF00332435

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In CdTe doped with vanadium the photoluminescence due to the 3T2(F) --> 3A2(F) transition of V3+(d2) is detected. Its decay time is determined as (630 +/- 20) mus, a result comparable to the analogous emissions in various host lattices. Further emissions around 5000 cm-1 and 9000 cm-1 are caused by charge-transfer transitions or bound-exciton decay. Excitation and sensitization spectra yield information on the positions of the energy levels within the gap, which are discussed using two different models. At T=4.2 K, the distance of the V2+/V3+ donor level is 7300 cm-1 and 5700 cm-1 referred to the valence and the conduction band edges, respectively. The absence of V2+(d3) centres is tentatively ascribed to the existence of deeply bound excitons.

引用

页码：447 / 451

页数：5

共 31 条

[1] VANADIUM ACTIVATED ZINC AND CADMIUM SULPHIDE AND SELENIDE PHOSPHORS [J].