RESONANT TUNNELING DIODES FOR SWITCHING APPLICATIONS

被引:43
作者
DIAMOND, SK [1 ]
OZBAY, E [1 ]
RODWELL, MJW [1 ]
BLOOM, DM [1 ]
PAO, YC [1 ]
HARRIS, JS [1 ]
机构
[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
关键词
D O I
10.1063/1.101213
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:153 / 155
页数:3
相关论文
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[2]   MILLIMETER-BAND OSCILLATIONS BASED ON RESONANT TUNNELING IN A DOUBLE-BARRIER DIODE AT ROOM-TEMPERATURE [J].
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PARKER, CD .
APPLIED PHYSICS LETTERS, 1987, 50 (02) :83-85
[3]   HETEROJUNCTION DOUBLE-BARRIER DIODES FOR LOGIC APPLICATIONS [J].
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COON, DD .
APPLIED PHYSICS LETTERS, 1987, 50 (18) :1246-1248
[4]  
SZE SM, 1981, PHYSICS SEMICONDUCTO