DYNAMIC STUDY OF SECONDARY RECRYSTALLIZATION OF 3-PERCENT SI-FE BY SYNCHROTRON X-RADIATION TOPOGRAPHY

被引：42

作者：

USHIGAMI, Y

SUGA, Y

TAKAHASHI, N

KAWASAKI, K

CHIKAURA, Y

KII, H

机构：

[1] R and D Labs. III, Nippon Steel Corp., Kitakyushu

[2] R and D Labs. I, Nippon Steel Corp., Kanagawa

[3] Faculty of Engineering, Kyushu Institute of Technology, Kitakyushu

来源：

JOURNAL OF MATERIALS ENGINEERING | 1991年 / 13卷 / 02期

关键词：

D O I：

10.1007/BF02995815

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Grain growth behavior of 3% Si-Fe was observed in situ and precisely analyzed by x-ray topographic techniques. A secondary grain which has higher frequency of coincidence grains in primary recrystallized matrix grows faster in a certain temperature range, and substructures in the secondary recrystallized grain are closely related to the grain growth behavior.

引用

页码：113 / 118

页数：6

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