SPIN DEPENDENT TRAPPING AT A SILICON GRAIN-BOUNDARY

被引:13
作者
LENAHAN, PM
SCHUBERT, WK
机构
关键词
D O I
10.1016/0038-1098(83)91060-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:423 / 425
页数:3
相关论文
共 7 条
[1]  
HASEGAWA S, 1982, J APPL PHYS, V53, P5022, DOI 10.1063/1.331378
[2]   DEUTERIUM PASSIVATION OF GRAIN-BOUNDARY DANGLING BONDS IN SILICON THIN-FILMS [J].
JOHNSON, NM ;
BIEGELSEN, DK ;
MOYER, MD .
APPLIED PHYSICS LETTERS, 1982, 40 (10) :882-884
[3]  
KAPLAN D, 1978, J PHYS LETT-PARIS, V39, pL51, DOI 10.1051/jphyslet:0197800390405100
[4]   SPIN-DEPENDENT RECOMBINATION ON SILICON SURFACE [J].
LEPINE, DJ .
PHYSICAL REVIEW B, 1972, 6 (02) :436-&
[5]   DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE [J].
PIKE, GE ;
SEAGER, CH .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3414-3422
[6]  
PIKE GE, 1981, ADV CERAM, V1, P53
[7]   SPIN-DEPENDENT RECOMBINATION IN A SILICON PARA-NORMAL JUNCTION [J].
SOLOMON, I .
SOLID STATE COMMUNICATIONS, 1976, 20 (03) :215-217