FABRICATION AND PERFORMANCE-CHARACTERISTICS OF INGAASP RIDGE-GUIDE DISTRIBUTED-FEEDBACK MULTIQUANTUM-WELL LASERS

被引：10

作者：

DUTTA, NK

WESSEL, T

OLSSON, NA

LOGAN, RA

YEN, R

ANTHONY, PJ

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 13期

关键词：

D O I：

10.1049/el:19850404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：571 / 573

页数：3

共 7 条

[1]

BURT G, 1984, ELECTRON LETT, V20, P27

[2] AUGER RECOMBINATION IN QUANTUM-WELL INGAASP HETEROSTRUCTURE LASERS [J].

CHIU, LC ;

YARIV, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) :1406-1409

[3] CALCULATION OF AUGER RATES IN A QUANTUM WELL STRUCTURE AND ITS APPLICATION TO INGAASP QUANTUM WELL LASERS [J].

DUTTA, NK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1236-1245

[4]

DUTTA NK, 1984, APPL PHYS LETT, V45, P636

[5] LOW-THRESHOLD INGAASP RIDGE WAVEGUIDE LASERS AT 1.3-MU-M [J].

KAMINOW, IP ;

STULZ, LW ;

KO, JS ;

DENTAI, AG ;

NAHORY, RE ;

DEWINTER, JC ;

HARTMAN, RL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) :1312-1319

[6] DYNAMIC LINEWIDTH OF AMPLITUDE-MODULATED SINGLE-LONGITUDINAL-MODE SEMICONDUCTOR-LASERS OPERATING AT 1.5 MU-M WAVELENGTH [J].

OLSSON, NA ;

DUTTA, NK ;

LIOU, KY .

ELECTRONICS LETTERS, 1984, 20 (03) :121-122

[7]

SUEMATSU Y, 1982, GAINASP ALLOY SEMICO, pCH14

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