EFFECT OF THERMAL ETCHING ON GAAS SUBSTRATE IN MOLECULAR-BEAM EPITAXY

被引:36
作者
SAITO, J
ISHIKAWA, T
NAKAMURA, T
NANBU, K
KONDO, K
SHIBATOMI, A
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 08期
关键词
D O I
10.1143/JJAP.25.1216
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:1216 / 1220
页数:5
相关论文
共 10 条
[1]   EFFECT OF SUBSTRATE SURFACE-TREATMENT IN MOLECULAR-BEAM EPITAXY ON THE VERTICAL ELECTRONIC TRANSPORT THROUGH THE FILM-SUBSTRATE INTERFACE [J].
CHANG, CA ;
HEIBLUM, M ;
LUDEKE, R ;
NATHAN, MI .
APPLIED PHYSICS LETTERS, 1981, 39 (03) :229-231
[2]  
Gray D.E., 1972, AM I PHYS HDB, V3rd, P4
[3]  
HIYAMIZU S, 1984, 1984 P SEM 3 5 MAT C, P364
[4]   REDUCTION OF A HIGHLY-RESISTIVE LAYER AT AN INTERRUPTED-INTERFACE OF GAAS GROWN BY MBE [J].
IIMURA, Y ;
TAKASUGI, H ;
KAWABE, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (01) :95-98
[5]  
KOMENO J, 1981, I PHYS C SER, V56, P9
[6]   CLASSIFICATION OF SURFACE-DEFECTS ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
NANBU, K ;
SAITO, J ;
ISHIKAWA, T ;
KONDO, K ;
SHIBATOMI, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) :601-604
[7]   REMOVAL OF THE HIGH-RESISTIVITY LAYER AT THE N ON N+ LIQUID-PHASE EPITAXIAL GAAS LAYER SUBSTRATE INTERFACE BY CONTROLLED INSITU ETCH-BACK [J].
SEABAUGH, AC ;
MATTAUCH, RJ .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6435-6437
[8]   PREPARATION OF A CLEAN GAAS(100) SURFACE WITHOUT GA OR AS VAPOR SOURCES [J].
SINHAROY, S ;
HOFFMAN, RA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1090-1092
[9]   MOLECULAR-BEAM EPITAXY OF II-VI COMPOUNDS [J].
SMITH, DL ;
PICKHARDT, VY .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2366-2374
[10]   TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].
WOOD, CEC ;
JOYCE, BA .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) :4854-4861